Development of Source System for EUV Lithography.

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

Approach to EUV Lithography Simulation

esign and analysis of a compact EUV nterferometric lithography system

ruce W. Smith ochester Institute of Technology icrosystems Engineering 2 Lomb Memorial Drive ochester, New York 14623 -mail: [email protected] Abstract. A small-scale interferometric EUV exposure system is presented, based on Talbot interferometric imaging. In this approach, illuminated EUV grating mask orders are recombined remotely through reflection, resulting in interference with spatial prese...

CO2 Laser Produced Tin Plasma Light Source as the Solution for EUV Lithography

High average power EUV light source has been the “most critical” issue in the research and development of the EUV lithography system in one decade. EUV LLC and International Sematech significantly stimulated the global research community to work seriously to advance plasma technology in achieving the goal of the EUV source, required by the semiconductor industry. It is instructive to look into ...

Modeling and optimization of mass-limited targets for EUV Lithography

Current challenges in the development of efficient laser produced plasma (LPP) sources for EUV lithography are increasing EUV power at IF and maximizing lifetime and therefore, reducing cost of devices. Mass-limited targets such as small tin droplets are considered among the best choices for cleaner operation of the optical system because of lower mass of atomic debris produced by the laser bea...